 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DSSK 40-0015B Power Schottky Rectifier with common cathode Preliminary Data IFAV = 2x20 A VRRM = 15 V VF = 0.32 V VRSM V 15 VRRM V 15 Type A C A TO-247 AD DSSK 40-0015B A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135C; rectangular, d = 0.5 TC = 135C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = tbd A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 50 20 40 350 tbd tbd tbd -55...+150 150 -55...+150 A A A A mJ A V/ms C C C W Nm g Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters TC = 25C mounting torque typical 90 0.8...1.2 6 Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses Symbol IR VF Conditions TVJ = 25C VR = VRRM TVJ = 100C VR = VRRM IF = 20 A; IF = 20 A; IF = 40 A; TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 10 200 0.32 0.44 0.41 1.4 0.25 mA mA V V V K/W K/W Dimensions see outlines.pdf RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 007 (c) 2000 IXYS All rights reserved 1-2 DSSK 40-0015B 100 A IF 1000 mA IR 100 TVJ=150C 125C 100C 10000 pF CT 10 TVJ = 150C 125C 25C 10 75C 50C 1000 1 25C TVJ= 25C 1 0.0 0.1 0.2 0.4 VF 0.6 V 0 2 4 6 8 10 12 14 V VR 100 0 2 4 6 8 10 12 14 V VR Fig. 1 Maximum forward voltage drop characteristics 60 A 50 IF(AV) 40 30 d=0.5 DC Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 25 W 20 P(AV) 15 d= DC 0.5 0.33 0.25 0.17 0.08 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 A IFSM 1000 10 20 10 0 0 40 80 TC 120 C 160 5 0 0 10 20 30 IF(AV) 40 A 100 10 100 1000 s 10000 tP Fig. 4 Average forward current IF(AV) versus case temperature TC 2 1 K/W ZthJC Fig. 5 Forward power loss characteristics D=0.5 0.33 0.25 0.17 0.08 Single Pulse 0.1 0.01 0.0001 DSSK 40-0015B 0.001 0.01 0.1 s1 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 007 (c) 2000 IXYS All rights reserved 2-2 |
Price & Availability of L221
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |